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| Part No. : UC200 | Manufacturer : solitron devices inc | Item Name: transistor |
| NSN: 5961-00-735-4881 (5961007354881) | CAGE Code: 21845 | FSC: 5961 Semiconductor Devices and Associated Hardware |
If you require part number UC200 from Solitron Devices Inc which is described as a Transistor component ASAP Logistic Solutions is your sourcing solution. On this page, you can request a quote on part number UC200 which is listed under the Federal Supply Class 5961 Semiconductor Devices and Associated Hardware. To ensure that you only procure the exact item you need to be sure to note that this particular product is listed with the NSN 5961007354881 and was produced under the CAGE Code 21845. To learn more about this listing or to simply initiate the purchasing process, complete and submit the RFQ form on this page for part UC200 today Within 15 minutes of receiving and reviewing a completed request based on the information you provide a member of our staff will contact you to provide a tailored solution to your comparison needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-735-4881 Item PartTypeName: TRANSISTOR | 5961 | 007354881 | N | |||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | ||||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 200102000 | 2 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-72 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE,GATE-TO-SOURCE,WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.0 MILLIAMPERES MAXIMUM GATE CURRENT |
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
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